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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2809 DESCRIPTION *With TO-3PN package *High speed switching *High breakdown voltage *Wide area of safe operation APPLICATIONS *For power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 300 300 6 2 4 50 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2809 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 300 V V(BR)CBO Emitter-base breakdown voltage IC=1mA ;IE=0 IC=1.5A; IB=0.3A 300 V VCE(sat) Collector-emitter saturation voltage 1.0 V VBE(sat) ICBO Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V A A Collector cut-off current VCB=300V IE=0 100 IEBO Emitter cut-off current VEB=6V; IC=0 100 hFE DC current gain IC=0.3A ; VCE=4V 50 fT Transition frequency IC=0.3A ; VCE=12V 20 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2809 Fig.2 outline dimensions 3 |
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